| 摘要 |
PROBLEM TO BE SOLVED: To prevent resonance of an optical semiconductor device in a high frequency zone from happening, and miniaturize the device and make the back of the device low. SOLUTION: A submount 1 is adapted such that a bank section 5 is provided on an upper main surface of an insulating substrate 7, and on an upper surface of the bank section 5 there are formed an optical semiconductor device mounting section 2 comprising a conductor layer at the center on the upper surface, and a line conductor 4 from the optical semiconductor device mounting section 2 to an end of the upper surface. Further, there is provided a lens mounting section 3 at a portion on the upper main surface located on the side of the bank 5 and further on the side of the optical semiconductor device mounting section 2 in which there is joined with the upper surface a lens 9 optically coupled with the optical semiconductor device mounted on the optical semiconductor device mounting section 2. Furthermore, a first ground conductor layer 20 is formed substantially the entire surface of a lower main surface of the insulating substrate 7. In the submount 1, a second ground conductor layer 22 is formed around the bank 5 on the upper main surface, and the optical semiconductor device mounting section 2 and the second conductor layer 22 are electrically connected to the first ground conductor layer 20 through a through-conductor 21, respectively.
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