| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode of high luminance capable of improving light take-out efficiency. SOLUTION: The light emitting diode is composed by successively stacking a one-conductivity type semiconductor layer 2 and an opposite-conductivity type semiconductor layer 3 on one main surface of a single crystal substrate 1, attaching one electrode 4 on the opposite-conductivity type semiconductor layer 3 and attaching the other electrode 5 composed of metal on the other main surface of the single crystal substrate 1. On the other main surface of the single crystal substrate 1, a number of recesses 6 whose cross sectional shapes are roughly V-shaped are formed at the density of 400 pieces/mm<2> to 40,000 pieces/mm<2> , for instance. |
