| 摘要 |
PURPOSE: A photoresist composition containing a photoresist additive, a method for forming the photoresist pattern using the composition, and a semiconductor device prepared by using the method are provided, so as that additive prevents an acid generated at the exposure part from being diffused into the non-exposure part, thereby improving the LER (line edge roughness) and the profile and lowering the Eop (optimum exposure energy). CONSTITUTION: The photoresist composition comprises an additive for preventing the diffusion of an acid, represented by the formula 1; a base resin; a photoacid generator; and an organic solvent, wherein R1 to R4 are independent each another and are H or a linear or branched alkyl group of C1-C10; and k is 0 or 1. Preferably the amount of the additive is 0.5-20 mol% based on the amount of the photoacid generator. Preferably the additive of the formula 1 is N,N,N',N'-tetramethyl-1,8-naphthalenediamine, N,N'-dimethyl-1,8-naphthalenediamine, N,N,N',N'-tetramethyl-1,8-diaminofluorene or N,N'-dimethyl-1,8-diaminofluorene.
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