| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing effectively the generation of a leak current even when a distance between a source and a drain is small. SOLUTION: This semiconductor device is provided with a source region 2 and a drain region 3 in a pair formed in a silicon substrate 1 and with a channel region 4 which is formed between the source region 2 and the drain region 3 and has a larger band gap than that of the silicon substrate 1.
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