| 摘要 |
PURPOSE: A memory device is provided to be capable of reducing power consumption and improving response time. CONSTITUTION: A memory device is provided with the first super-conducting layer(11) formed on a substrate(10) and a plurality of trap parts(15,16) spaced apart from each other at the first super-conducting layer for inducing the trap of magnetic flux line. At this time, the trap part and the first super-conducting layer are made of different materials, respectively. The memory device further includes a conductive layer(12) formed on the first super-conducting layer, an insulating layer(13) formed on the conductive layer, and the second super-conducting layer(14) formed on the insulating layer. Preferably, the second super-conducting layer is made of the same material as the first super-conducting layer.
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