METHOD FOR FABRICATING FIELD EFFECT TRANSISTOR USING SUPERCONDUCTOR

摘要

PURPOSE: A method for fabricating a field effect transistor using a superconductor is provided to remove metallic components in an Al2O3 insulation layer on MgB2 superconductor to improve the quality of electrical insulation by performing thermal process. CONSTITUTION: A MgB2 superconducting layer is deposited on a substrate(10) and a mask is formed on the whole surface of it. The superconductor layer is etched to form a superconducting layer pattern by using the photoresist pattern made by performing photolithography on the mask. After removing the mask, A source and drain electrode(13) are deposited on the superconducting layer pattern(11). An Al2O3 insulation layer(14) is deposited on the resultant structure. A gate oxide(15) is deposited on the insulation layer. The insulation layer is thermally processed under 300-400 degree C.