发明名称 |
Method and appartus for plasma deposition |
摘要 |
<p>The disclosure is directed to a plasma jet deposition method and apparatus for depositing a substance, such as synthetic diamond. A plasma beam containing constituents of the substance to be deposited is produced. A substrate (150) is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sectional area of the beam impinging on the surface. Repetitive motion is introduced between the substrate and the beam as the substrate is deposited on the surface. The substrate in a plasma jet deposition system can be provided with structural attributes, such as apertures (170) and/or grooves (168), that facilitate efficient deposition. Groups of substrates (610,620,630 and 640) can be arranged with surfaces generally along the envelope of plasma beam to facilitate efficient deposition. <IMAGE></p> |
申请公布号 |
EP1302248(A2) |
申请公布日期 |
2003.04.16 |
申请号 |
EP20030001217 |
申请日期 |
1992.05.08 |
申请人 |
CELESTECH, INC. |
发明人 |
CANN, GORDON L.;SHEPARD, CECIL B., JR.;MCKEVITT, FRANK L. |
分类号 |
C23C16/26;C23C4/12;C23C16/27;C23C16/458;C23C16/50;C23C16/513;C30B29/04;H01L21/205;(IPC1-7):B05D3/06;C23C16/44 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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