发明名称 |
Self-aligned resistive plugs for forming memory cell with phase change material |
摘要 |
Memory devices are disclosed for storage and retrieval of information, wherein resistive plugs are provided above and below a phase change material to form a memory cell. The plugs may be formed by implanting regions in high resistivity material above and below a phase change material layer to lower the resistivity in the implanted regions.
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申请公布号 |
US6545903(B1) |
申请公布日期 |
2003.04.08 |
申请号 |
US20010023392 |
申请日期 |
2001.12.17 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WU ZHIQIANG |
分类号 |
H01L27/24;H01L45/00;(IPC1-7):G11C11/00 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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