发明名称 Antifuse manufacturing process
摘要 An antifuse structure of the present invention comprises an antifase layer and a bottom electrode which are immune to the damages caused by harmful processing environment. The three major components of the antifuse-the bottom electrode, the antifuse layer and the top buffer layer are formed consecutively in a friendly manufacturing environment. This antifuse structure can substantially improve the antifuse manufacturability.
申请公布号 US6541363(B2) 申请公布日期 2003.04.01
申请号 US19980183948 申请日期 1998.10.31
申请人 ZHANG GUOBIAO 发明人 ZHANG GUOBIAO
分类号 H01L23/525;(IPC1-7):H01L21/82;H01L21/320;H01L21/768 主分类号 H01L23/525
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