| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor strain sensor having higher sensitivity to pressure, being lower in temperature dependence, and a method for producing the same. SOLUTION: The semiconductor strain sensor is obtained by mixing <=20 wt.% sintering aid comprising alumina and yttria with α-type silicon carbide ceramic powder, sintering and attaching electrodes to the obtained sintered compact. This sensor shows high sensitivity to pressure at a high temperature and the temperature dependence of the sensitivity is low. |
