| 摘要 |
In a conventional DRAM, row addresses and column addresses are latched by DFF and decoding of addresses is started a certain time after a clock rise, and it takes a long time after the clock rise until the decoding is completed, having a problem that it is not possible to perform read/write at high speed. The present invention adopts a configuration connecting latch circuits such as the row address latch circuits and column address latch circuits using a scan chain. This makes decoding of row addresses and column addresses start when the clock is "L", making it possible to complete decoding on the rise of each operation clock cycle, shorten the operation clock cycle and speed up read/write. The conventional art conducts a test on the connection between the row addresses and column addresses of the logic section and memory through an actual operation test of the entire LSI, resulting in a low circuit failure detection rate. The present invention conducts this test through a scan test, making it possible to automatically create test patterns with high circuit failure detection rate.
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