| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon target for minimizing contamination, when depositing an amorphous silicon film by sputtering. SOLUTION: A method of forming silicon(Si) target tiles in the fabrication of a silicon film for an integrated circuit(IC) deposited by sputtering comprises a process of forming silicon tiles, and a process of beveling the edges of the silicon tiles to minimize the generation of impurity particles. As a result of these processes, contamination and impurity particle formation are minimized at sputter deposition.
|
