| 摘要 |
PROBLEM TO BE SOLVED: To form a BTBAS-nitride film with a stable film thickness accuracy. SOLUTION: A CVD system comprises a processing chamber 14, where a plurality of wafers 24 are stored in such a state as to be held by a boat 25, a film-forming gas supply pipe 20 for supplying a BTBAS gas and an NH3 gas into processing chamber 14 to form the BTBAS-nitride film on the wafer, a cleaning gas supply pipe 21 for supplying NF3 gas into the processing chamber 14, and coating gas supply pipes 22A and 22B for supplying BTBAS gas 37 and oxygen gas 36 into the processing chamber 14, after a cleaning process. Fluorine 34, contained in the cleaning gas sucked to the processing chamber 14 and the boat 25 in the cleaning process is confined in a coating film 35 in the coating process, which can prevent the influence of the fluorine on film formation in a film-forming process conducted thereafter, resulting in obtaining an equivalent stable film thickness in accuracy as that obtained in the film formation before the cleaning process. Consequently, variations in film thickness among batches in the film formation process can be prevented. |
