发明名称 Thin film resonator and method for manufacturing the same
摘要 A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means has several posts and a supporting layer formed on the posts. The first electrode, the dielectric layer and the second electrode are successively formed on the supporting layer. The thin film resonator is exceptionally small and can be highly integrated, and the thickness of the dielectric layer of the resonator can be adjusted to achieve the integration of multiple bands including radio, intermediate and low frequencies. Also, the thin film resonator can minimize interference and has ideal dimensions because of its compact substrate, making the thin film resonator exceptionally small, yet comprising a three-dimensional, floating construction.
申请公布号 US2003030118(A1) 申请公布日期 2003.02.13
申请号 US20020169500 申请日期 2002.07.03
申请人 KIM EON-KYEONG 发明人 KIM EON-KYEONG
分类号 H03H9/00;H03H3/02;H03H3/04;H03H9/05;H03H9/10;H03H9/13;H03H9/17;(IPC1-7):H01L27/14 主分类号 H03H9/00
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