| 摘要 |
PURPOSE: To inexpensively realize a memory with large storage capacity and less data holding current. CONSTITUTION: A nonvolatile memory, an SRAM, a DRAM and a control circuit are modularized in one package. An address to the SRAM and an address to the DRAM are allocated by the control circuit and data to require holding for a long time is stored in the SRAM. In the DRAM, two chips are mapped in the same address space and alternately refreshed. A plurality of chips are mutually stacked, arranged and wired by BGA and bonding between chips. Consequently, the memory with large capacity to which no refreshment from the outside to the DRAM is required to be performed is realized. In addition, the data holding current is reduced by setting a data holding area and a work area and controlling power of each of the areas. Furthermore, this semiconductor circuit is miniaturized by mounting a plurality of semiconductor chips on one sealing body. |
