| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating method which can form a plated film with thickness of very little distribution, by installing a shielding plate of a simple shape without increasing cost of a plating apparatus, and to provide the plating apparatus. SOLUTION: This plating method is characterized by interposing the shielding plate 7 having one opening, between a semiconductor substrate 4 (a substrate to be plated) and an anodic electrode 5. The opening of the above shielding sheet 7 has a perimeter shorter than that of the semiconductor substrate 4 by such a predetermined length, as the dimensional difference between the semiconductor substrate 4 and the opening is most suitable for making a plated film thickness (height of a bump electrode) uniform over the whole surface of the semiconductor substrate 4. |
