| 摘要 |
<p>A semiconductor wafer (1) adapted for planarization by polishing the wafer (1) with a polishing pad and a polishing fluid, the wafer (1) having a metal layer (5), and a resistant film formed selectively on low topography features of the metal layer (5) to resist the polishing fluid while high topography features of the metal layer (5) are removed by said polishing, which minimizes a time duration for attaining planarization of the wafer (1) by said polishing.</p> |
