发明名称 |
Semiconductor memory device including internal power circuit having tuning function |
摘要 |
A tuning control circuit includes fuse devices each shifting from a conductive state to an interrupted state in response to a program input from the outside, and signal driving circuits for driving the signal levels of tuning control signals in accordance with the states of the fuse devices. A reference voltage generating circuit generates a reference voltage corresponding to a reference value of a memory array voltage of a semiconductor memory device according to the invention in accordance with an electrical resistance value which is finely adjusted in response to the tuning control signals.
|
申请公布号 |
US2003021162(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020120575 |
申请日期 |
2002.04.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MORISHITA FUKASHI;TAITO YASUHIKO;YAMAZAKI AKIRA;OKAMOTO MAKO;FUJII NOBUYUKI |
分类号 |
G11C11/413;G11C5/02;G11C5/14;G11C11/401;G11C11/407;G11C11/41;H01L27/10;(IPC1-7):G11C5/14 |
主分类号 |
G11C11/413 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|