SPLIT TYPE LIGHT RECEIVING ELEMENT AND CIRCUIT−BUILT−IN LIGHT RECEIVING ELEMENT AND OPTICAL DISK DEVICE

摘要

A plurality of N−type diffusion layers (105, 108) are formed a specified distance apart on a P−type semiconductor layer (102). A P−type leak prevention layer (109) formed between at least N−type diffusion layers (105, 108) prevents leaking between the diffusion layers (105, 108). A dielectric film (115) is formed in at least a light incident area on a P−type semiconductor layer (102) including the diffusion layers (105, 108) and the leak prevention layer (109). Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit−built−in light receiving element and an optical disk using the split type light receiving element.