| 摘要 |
PROBLEM TO BE SOLVED: To reduce the power consumption of a semiconductor memory having a wide bus bandwidth of input/output data and to realize a high speed operation thereof. SOLUTION: Data read to a bit line from a memory cell at the time of reading operation is amplified by a sense amplifier, and outputted to the outside. At the time, a data control circuit outputs all data read to the bit line from the memory cell and amplified by the sense amplifier are outputted to the outside. Data supplied to a bit line from the outside at the time of write-in operation is amplified by the sense amplifier, and written in the memory cell. At the time, the data control circuit writes all data inputted from the outside and amplified by the sense amplifier in the memory cell. As all data amplified by the sense amplifier is inputted and outputted to the outside, a data transfer rate of input/output data can be improved, and power consumption per transfer quantity of data can be reduced. |
