发明名称 Compound semiconductor device and manufacturing method thereof
摘要 In a method of manufacturing a compound semiconductor device, individual chip patterns are projected onto a (1 0 0) surface of a GaAs wafer so that the columns and rows of the chip patterns are aligned in a direction slanting by 45 degrees with respect to a [O 1 1] direction of the GaAs wafer. The wafer is diced along this slanting direction and chipping along the edges of the individual separated chips is greatly reduced.
申请公布号 US2003017644(A1) 申请公布日期 2003.01.23
申请号 US20020189775 申请日期 2002.07.08
申请人 SANYO ELECTRIC CO., LTD. 发明人 ASANO TETSURO;UEKAWA MASAHIRO;HIRATA KOICHI;SAKAKIBARA MIKITO
分类号 G03F1/08;G03F1/00;G03F1/70;G03F7/20;H01L21/027;H01L21/301;H01L21/304;H01L29/04;H01L29/80;(IPC1-7):H01L21/301;H01L21/44 主分类号 G03F1/08
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