| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputter target, by which a gate insulating film having high uniformity of a film thickness and consisting of hafnium oxide or zirconium oxide can be formed, and to provide an insulation film and an electronic component. SOLUTION: The sputter target is made of hafnium, zirconium or their alloy. The average crystal grain diameter of its surfaces to be sputtered is <=500μm, and the variance of the average crystal grain diameter lies within 20%. The gate insulation film consists of a hafnium oxide or zirconium oxide film, formed by using the sputter target in the atmosphere of gaseous oxygen. The electronic component is provided with the gate insulating film.
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