NON-VOLATILE MEMORY ELEMENT PROVIDED WITH TWO-BIT OPERATED TWO TRANSISTORS AND ITS DRIVING METHOD AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an EEPROM element, its driving method and manufacturing method having an ONO structure capable of improving electronic trap efficiency and decreasing trap current. SOLUTION: The EEPROM element includes a first conductive semiconductor substrate provided with mutually first and second channel areas, first and second conductive gates formed on the first and second channel areas respectively so as to be mutually opposed, first and second insulating films formed on the lower parts of the first and second conductive gates and a substrate therebetween respectively, and second conductive first and second joining areas overlapped with the first and second conductive gates to be formed on the substrate and restricting the first and second channel areas in a space of the substrate therebetween.