发明名称 |
Control of buried oxide quality in low dose SIMOX |
摘要 |
A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stable defect region, wherein the low energy implantation steps uses at least one ion other than oxygen; oxidation and, optionally, annealing, is provided. Silicon-on-insulator (SOI) materials comprising a semiconductor substrate having a DIBOX region in patterned or unpatterned forms is also provided herein.
|
申请公布号 |
US2003008471(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20020185580 |
申请日期 |
2002.06.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NORCOTT MAURICE H.;SADANA DEVENDRA K. |
分类号 |
H01L21/265;H01L21/762;(IPC1-7):H01L21/76;H01L21/425 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|