发明名称 WORDLINE VOLTAGE CLAMPING CIRCUIT
摘要 PURPOSE: A wordline voltage clamping circuit is provided to minimize a power consumption by interrupting the current path after the clamping is implemented as well as to easily setting a clamping voltage by controlling a body bias of a voltage drop transistor, thereby becoming resistant to a lot-to-lot and a wafer-to-wafer variations. CONSTITUTION: A wordline voltage clamping circuit includes a reference voltage generation block(230) for generating a reference voltage in response to a first signal(CE), a bootstrap circuit(220) for generating a pumping voltage being larger than a target voltage to the output terminal in response to the first signal(CE) and a second signal(ATD), a control signal generation block(210) for generating a first and a second control signals(CLAM_EN,CLMP_ENb) in response to the first to a third signals(CE,CLAMP), a clamping control block(240) for generating a compare voltage by dropping the pumping voltage in response to the first and the second control signals(CLAM_EN,CLMP_ENb), a comparator(250) for generating the third signal(CLAMP) by comparing the reference voltage and the comparing voltage and a discharge block(260) for dropping the pumping voltage to the target voltage by discharging the potential of the output terminal in response to the third signal(CLAMP).
申请公布号 KR20030002731(A) 申请公布日期 2003.01.09
申请号 KR20010038431 申请日期 2001.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, DAE HAN
分类号 G11C11/407;G11C8/08;G11C16/06;(IPC1-7):G11C8/08 主分类号 G11C11/407
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