| 摘要 |
<p>A semiconductor-on-insulator (SOI) device (10). The SOI device includes a semiconductor substrate layer (18); an insulator layer (16) disposed on the substrate layer; a semiconductor active region (19) disposed on the insulator layer, the active region including a source (20), a drain (22), and a body (24) disposed therebetween, at least one of the source and the drain forming a hyperabrupt junction (40, 42) with the body; and a gate (46) disposed on the body such that the gate, source, drain and body are operatively arranged to form a transistor. The at least one of the source and drain forming the hyperabrupt junction with the body includes a silicide region (54, 56). The silicide region ahs a generally vertical interface (70, 74) which is laterally spaced apart from the hyperabrupt junction by about 60 Å to about 150 Å.</p> |
