| 发明名称 |
Semiconductor device having a ferroelectric capacitor |
| 摘要 |
A ferroelectric capacitor includes a lower electrode, a ferroelectric capacitor insulation film formed on the lower electrode and an upper electrode formed on the ferroelectric capacitor insulation film, wherein the ferroelectric capacitor insulation film has a composition of PZT and contains an excess amount of Pb with respect to a stoichiometry of PZT.
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| 申请公布号 |
US2002190293(A1) |
申请公布日期 |
2002.12.19 |
| 申请号 |
US20020163454 |
申请日期 |
2002.06.07 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
CROSS JEFFREY SCOTT;SAKAI TSUYOSHI;FUJIKI MITSUSHI;TSUKADA MINEHARU |
| 分类号 |
H01L21/8247;H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8247 |
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