发明名称 Semiconductor redundant memory provided in common
摘要 The present invention relates to a semiconductor memory having a pre-fetch structure. In such memory, an odd address cell array is provided with an odd address redundant cell array, and an even address cell array is provided with an even address redundant cell array, firstly, the present invention comprises a redundant memory, which stores an odd redundant address and an even redundant address, together with odd and even selection data. Since redundant memory is used flexibly on the odd side and even side, it is possible to maintain a high relief probability even when redundant memory capacity is reduced.
申请公布号 US2002194420(A1) 申请公布日期 2002.12.19
申请号 US20020216920 申请日期 2002.08.13
申请人 FUJITSU LIMITED 发明人 TOMITA HORPYOSHI
分类号 G11C11/407;G11C11/401;G11C16/06;G11C29/00;G11C29/04;(IPC1-7):G06F12/00 主分类号 G11C11/407
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