PURPOSE: A method for fabricating an ultrasonic probe is provided to form a two-dimensional array ultrasonic probe by depositing a bulk type piezoelectric material as a thin film or a thick film. CONSTITUTION: A CMOS(Complementary Metal Oxide Semiconductor) is mounted on a substrate(10). A common electrode pad(13) and a transistor pad(15) are formed on the substrate(10). An interlayer dielectric(17) is formed on an upper portion of the substrate(10). A membrane(19) is formed on an upper portion of the interlayer dielectric(17) in order to control the stress generated between layers. A lower electrode(21) is formed on an upper portion of the membrane(19). A piezoelectric layer(23) is formed on an upper portion of the lower electrode(21). An upper electrode(25) is formed on an upper portion of the piezoelectric layer(23). A combination layer is formed on an upper portion of the upper electrode(25).
申请公布号
KR20020092644(A)
申请公布日期
2002.12.12
申请号
KR20010031404
申请日期
2001.06.05
申请人
NANOWIZ INC.
发明人
CHOI, YEONG JUN;JU, SANG BAEK;JUN, YEONG DEUK;KIM, DONG GYUN;LEE, JONG WON;OK, JAE YONG;PARK, CHANG SU