发明名称 |
Light-emitting semiconductor device and method of fabrication |
摘要 |
A low-resistance silicon baseplate (11) has formed thereon a buffer layer 12 in the form of an altering lamination of AlN sublayers (12a) and GaN sublayers (12b). On this buffer layer there are formed an n-type semiconductor region (13) of gallium nitride, an active layer (14) of gallium indium nitride, and a p-type semiconductor region (15) of gallium nitride, in that order. An anode (17) is formed on the p-type semiconductor region (15), and a cathode (18) on the baseplate (11).
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申请公布号 |
US2002158253(A1) |
申请公布日期 |
2002.10.31 |
申请号 |
US20010958822 |
申请日期 |
2001.10.15 |
申请人 |
MOKU TETSUJI;OHTSUKA KOHJI;YANAGIHARA MASATAKA;KIKUCHI MASAAKI |
发明人 |
MOKU TETSUJI;OHTSUKA KOHJI;YANAGIHARA MASATAKA;KIKUCHI MASAAKI |
分类号 |
H01L33/00;H01L33/04;H01L33/32;(IPC1-7):H01L31/025 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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