| 发明名称 |
Verfahren zur Herstellung von Metall/Halbleiter-Kontakten |
| 摘要 |
According to the invention, a contact hole is filled with a metal or a metal alloy when a bit line is brought into contact with a selection transistor of a dynamic memory unit on a semiconductor wafer. The semiconductor substrate in the contact hole comprises a dopant, and a liner layer is integrated between the semiconductor substrate and the metal filling.
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| 申请公布号 |
DE10119873(A1) |
申请公布日期 |
2002.10.31 |
| 申请号 |
DE2001119873 |
申请日期 |
2001.04.24 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
STAUB, RALF;AMON, JUERGEN;URBANSKY, NORBERT |
| 分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L21/60;H01L21/768;H01L21/8242;H01L23/52;H01L27/108;(IPC1-7):H01L21/283;H01L21/824 |
主分类号 |
H01L21/28 |
| 代理机构 |
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| 主权项 |
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