SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE: To provide a semiconductor integrated circuit having an excellent circuit characteristic by using P-channel TFTs for all monolithic active matrix circuits and an offset gate type TFT for the TFT constituting an active matrix circuit. CONSTITUTION: Island-like areas 103-105 are formed by etching a crystallized silicon film. The areas 103 and 104 are used for TFTs constituting peripheral drive circuits and the area 105 is used for a TFT forming an active matrix circuit. Then a gate insulating film is formed by depositing a silicon oxide film 106. In addition, gate electrodes 107-109 are formed by depositing and etching an aluminum film. Offsets can be formed by satisfactorily utilizing an increased amount resulting from anodic oxidation when films 110-112 composed of a product of anodic oxidation are formed on the side and upper surfaces of the gate electrodes 107-109 by applying a voltage across the electrodes 107-109 in an electrolyte. Therefore, a semiconductor integrated circuit having an excellent circuit characteristic can be obtained, because the drain current of the circuit can be prevented from becoming large when a reverse bias current is supplied to the gate electrodes.