发明名称 IC OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: An IC(Integrated Circuit) of a semiconductor device is provided to obtain operating margins by forming differently delay paths on activated signals in a burn-in test mode and a normal mode. CONSTITUTION: A sense amplifier(10) is connected with a bit line(B) and a complementary bit line(B/) of a memory cell portion(9) in order to sense the stored data of the memory cell portion(9). A bit line division signal generation portion(3) outputs a bit line division signal in order to select one of two bit lines shared by a sense amplifier(10). A fuse portion(8) outputs fuse signals and the second address signal by determining a state of a word line repair fuse of the selected memory cell portion(9). A mode selection portion(7) outputs selectively the first and the second mode signals for controlling a normal mode and a test mode by using different delay paths. The first and the second word line driving portions(2,6) outputs the first and the second word line driving signals to access the data of the memory cell portion(9). A sense amplifier driving portion(4) outputs a sense amplifier activation signal for obtaining an operating margin between the first and the second word lines(WL1,WL2) and the sense amplifier(10) by using the different delay paths. The first and the second column driving portions(1,5) outputs the first and the second column active signals to output the data of the memory cell portion(9) corresponding to the first and the second word lines(WL1,WL2).
申请公布号 KR20020080088(A) 申请公布日期 2002.10.23
申请号 KR20010019257 申请日期 2001.04.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BYUN, HUI JIN;CHO, GWANG RAE;KIM, JUN HO;LEE, BYEONG JAE;LEE, SANG GWON;NAM, YEONG JUN
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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