FET structures having symmetric and/or distributed feedforward capacitor connections

摘要

A FET structure (100) comprises a FET (50) including a gate (31) having a plurality of gate fingers (31a,31d), a plurality of source fingers (26a), and a plurality of drain fingers (24a); and a feedforward capacitor (C1) electrically coupled with the FET (50) for evenly or symmetrically distributing capacitance of the feedforward capacitor to the gate fingers (31a-31d) and reducing the effect of distributed resistance along the gate.