METHOD FOR DOPING OXYGEN TO GALLIUM NITRIDE CRYSTAL AND N-TYPE OXYGEN-DOPE GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE

摘要

PURPOSE: A method for doping oxygen to gallium nitride crystal and an n-type oxygen-doped gallium nitride single crystal substrate is provided to grow a gallium nitride single crystal which can take oxygen within the crystal as an n-type dopant. CONSTITUTION: A seed crystal having a face other than a C-face on the surface(upper surface) is used. While a gallium raw material, a nitrogen raw material and raw gas containing oxygen to be doped are fed to the seed crystal, the gallium nitride crystal is vapor-grown while keeping the surface other than the C-face. The oxygen is doped within the gallium nitride crystal through the surface. Or a seed crystal having a C-face on the surface is used. While a gallium raw material, a nitrogen raw material and raw gas containing oxygen to be doped are fed to the seed crystal, a facet-face other than the C-face is generated on the surface of the seed crystal and a gallium nitride crystal is vapor-grown in the C-axis direction of the seed crystal while keeping the facet-face. The oxygen is doped within the gallium nitride crystal through the facet-face.