| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of a magnetoresistance effect element of synthetic ferri-free(SFF)structure not appropriately matching with a hard bias layer and a stabilized anti-parallelism can be realized, without generating disturbance of magnetization direction adjacent to the edge of a free magnetic layer, which results in lowering of reliability. SOLUTION: A free magnetic layer 25, formed in a multi-layer film 20, has a synthetic ferri-free(SFF) structure which has three layers, a first free magnetic layer 25A, an intermediate layer 25B and a second free magnetic layer 25C; and the intermediate layer 25B is made of Ru, and at least either of the first free magnetic layer 25A and second free magnetic layer 25C is made of CoFeNi alloy, where the composition ratio of the CoFeNi alloy shows Fe of 9 atm.% or more and 17 atom.% or less, Ni of 0.5 atom.% or more and 10 atm.% or less, and the remaining part being made of Co.
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