发明名称 DEPOSITION METHOD, DEPOSITION APPARATUS, INSULATING FILM AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>A deposition method and a deposition apparatus for depositing a boron carbon nitrogen film. A boron carbon nitride film (61) is deposited over a substrate (60) by generating a plasma (50) in a cylindrical enclosure (1), exciting mainly nitrogen atoms in the cylindrical enclosure (1), and then causing them to react with boron and carbon.</p>
申请公布号 WO2002080260(P1) 申请公布日期 2002.10.10
申请号 JP2002002837 申请日期 2002.03.25
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