| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a method of forming a thin film, with which a polycrystalline-silicon thin film having crystallites of large grain size is formed and a process can be carried out without damaging an underlying glass substrate. SOLUTION: In irradiating a region of an amorphous-silicon thin film 107 with an excimer laser beam 105, surroundings of the region are selectively heated by a metal wire 104, which is heated at high-temperature of 1,500-2,000 deg.C by applying an electrical voltage. Thereby, the temperature difference between the molten region and its surroundings is reduced, and the solidification rate is lowered, enabling to form a polycrystalline-silicon thin film 108 having crystallites of large grain size. No large damage is given to the glass substrate 106, since only the surroundings of the irradiated region are heated at high temperature in a short time.
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