发明名称 Production method of semiconductor base material and production method of solar cell
摘要 When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.
申请公布号 US6448155(B1) 申请公布日期 2002.09.10
申请号 US20000592559 申请日期 2000.06.12
申请人 CANON KABUSHIKI KAISHA 发明人 IWASAKI YUKIKO;YONEHARA TAKAO;NISHIDA SHOJI;SAKAGUCHI KIYOFUMI;UKIYO NORITAKA
分类号 H01L31/04;H01L21/02;H01L21/20;H01L21/301;H01L21/304;H01L21/68;H01L21/762;(IPC1-7):H01L21/301 主分类号 H01L31/04
代理机构 代理人
主权项
地址