发明名称 |
Production method of semiconductor base material and production method of solar cell |
摘要 |
When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.
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申请公布号 |
US6448155(B1) |
申请公布日期 |
2002.09.10 |
申请号 |
US20000592559 |
申请日期 |
2000.06.12 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
IWASAKI YUKIKO;YONEHARA TAKAO;NISHIDA SHOJI;SAKAGUCHI KIYOFUMI;UKIYO NORITAKA |
分类号 |
H01L31/04;H01L21/02;H01L21/20;H01L21/301;H01L21/304;H01L21/68;H01L21/762;(IPC1-7):H01L21/301 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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