| 摘要 |
1277962 Semi-conductor devices GENERAL ELECTRIC CO 20 June 1969 [23 July 1968] 31376/69 Heading H1K A semi-conductor body 30 is provided with a composite non-rectifying electrode 20 by depositing in sequence a layer 7A of Sb, a layer 7B of Au, a layer 8A of P and a layer 8B of Au, and then heating the structure, e.g. for 5 minutes at 250-350‹C. followed by 5-30 minutes at 300-650‹ C. in nitrogen, to cause interdiffusion of the metals to occur between the layers. A fifth layer 9 of Au may also be applied. The layers 7A, 7B may be formed by evaporation from a common Au-Sb source and the layers 8A, 8B may similarly derive from a common Au-P source. The device illustrated in an npn Si planar transistor, having an emitter electrode 2 either of Al or made similarly to the electrode 20. If the composite inter-diffused electrode is applied to p-type material the latter should be sufficiently highly doped not to be converted to n-type material by the electrode constituents.
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