发明名称 |
Trench DMOS transistor having lightly doped source structure |
摘要 |
A trench DMOS transistor cell includes a substrate of a first conductivity type and a body region located on the substrate, which has a second conductivity type. At least one trench extends through the body region and the substrate. An insulating layer lines the trench and a conductive electrode is placed in the trench overlying the insulating layer. A source region of the first conductivity type is located in the body region adjacent to the trench. The source region includes a first layer and a second layer disposed over the first layer. The first layer has a lower dopant concentration of the first conductivity type relative to the dopant concentration of the second layer.
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申请公布号 |
US6445037(B1) |
申请公布日期 |
2002.09.03 |
申请号 |
US20000672209 |
申请日期 |
2000.09.28 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
HSHIEH FWU-IUAN;SO KOON CHONG;TSUI YAN MAN |
分类号 |
H01L21/336;H01L29/08;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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