发明名称 Wafer level hermetic sealing method
摘要 A device that is hermetically sealed at a wafer level or a method of hermetically sealing a device, which is sensitive to high temperatures or affected by heating cycles. Semiconductor devices are formed on a wafer. A lid wafer is formed. Adhesives are formed in a predetermined position over the wafer and/or the lid wafer. The wafer and the lid wafer are sealed by the adhesives at the wafer level. The sealing may be performed at a low temperature using a solder to protect the devices sensitive to heat. The sealed devices are diced into individual chips. In the wafer level hermetic sealing method, a sawing operation is performed after the devices are sealed. Therefore, the overall processing time is reduced, devices are protected from the effects of moisture or particles, and devices having a moving structure, such as MEMS devices, are more easily handled.
申请公布号 US2002113296(A1) 申请公布日期 2002.08.22
申请号 US20010984734 申请日期 2001.10.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO CHANG-HO;SHIN HYUNG-JAE;KIM WOON-BAE
分类号 H01L23/14;B81B7/00;B81C1/00;H01L21/50;H01L23/00;H01L23/04;H01L23/10;(IPC1-7):H01L21/44;H01L23/552 主分类号 H01L23/14
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