摘要 |
Formation of a structure of a conductive layer of an integrated circuit includes providing a conductive layer to be patterned and then forming a titanium nitride layer on the conductive layer. An oxide region is formed on the titanium nitride layer. A photoresist layer is formed oh the oxide region for use in patterning the conductive layer. The oxide region may be formed by oxidation of the titanium nitride layer or by depositing an oxide layer on the titanium nitride layer.
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