| 摘要 |
PROBLEM TO BE SOLVED: To efficiently manufacture a semiconductor device having a silicon layer which has a small number of grain boundaries and is similar to a single crystal. SOLUTION: A foundation layer 102 formed of a silicon oxide is formed on an insulation substrate 101. Then, an amorphous silicon layer which is an element formation region 103 is formed on the foundation layer 102, and the layer is crystallized by laser irradiation or other method. Silicon oxide crystals contained in the foundation layer 102 have a controlled orientation, for example, oriented in the <0001> direction. The amorphous silicon crystals contained in the silicon layer formed on the foundation layer 102 are crystallized following the orientation of that of the silicon oxide crystals contained in the foundation layer 102.
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