| 摘要 |
PROBLEM TO BE SOLVED: To enhance the reliability of a device by using an SOG film as an interlayer insulation film at a part where a pattern is formed with high density and preventing the SOG film from being corroded by cleaning, or the like, to form a bridge between the pads or contacts at the time of forming pads or contact with high density thereby reducing failure. SOLUTION: The inventive method comprised a step for forming an insulation film between SOG layers on a substrate having a plurality of conductive regions and making holes for exposing at least a part of the conductive regions by patterning the insulation film between SOG layers, a step for forming a liner film on the insulation film between SOG layers in which holes are made and forming a spacer on the sidewall of the hole by etch back, a step for cleaning the substrate on which the spacer is formed, and a step for filling the holes with a conductive film. The invention is especially suitable for fabrication of a semiconductor device using a film of inorganic SOG series, and is suitable when an SOG film filling a limited region is formed and holes are made in that limited region.
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