Apparatus for processing a substrate (44) comprising; a susceptor (382) for supporting a substrate (44); an upper heat source (351) spaced above the susceptor; a lower heat source (352) spaced below the susceptor; and a controller (390) providing power to said heat sources at a selected ratio between said sources, said controller being configured to vary said ratio during a high temperature processing cycle of a substrate to thereby vary the ratio of the heat provided by the heat sources during the cycle. A method of maintaining uniform temperature of a semiconductor wafer during high temperature processing is also disclosed. <IMAGE>
申请公布号
EP1209251(A3)
申请公布日期
2002.06.26
申请号
EP20010129575
申请日期
1998.01.23
申请人
ASM AMERICA, INC.
发明人
FOSTER, DERRICK W.;VYNE, ROBERT M.;WENGERT, JOHN F.;VAN DER JEUGD, CORNELIUS A.;JACOBS, LOREN R.;VAN BILSEN, FRANK B.M.;GOODMANN, MATTHEW;HARTMANN, GLENN;LAYTON, JASON M.