Grinding method, semiconductor device and method of manufacturing semiconductor device

摘要

A surface of a wafer (semiconductor substrate) is subjected to grinding by rotating it and bringing it into contact with a rotating grinding wheel. The grinding wheel is rotated in a first direction at a rotating speed N1. The wafer is rotated in a second direction which is opposite to the first direction at a rotating speed N2, wherein a value of N2/N1 is in the range of 0.006 to 0.025. The wafer is then carried from the grinding process to a dicing process while being maintained in a horizontal position by using a wafer handling jig to prevent the breakage of the wafer. A flash etching process may also be used at the end of the grinding process.