| 发明名称 |
Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 摘要 |
A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.
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| 申请公布号 |
US2002059898(A1) |
申请公布日期 |
2002.05.23 |
| 申请号 |
US20010001476 |
申请日期 |
2001.11.01 |
| 申请人 |
LANDINI BARBARA E.;BRANDES GEORGE R.;TISCHLER MICHAEL A. |
发明人 |
LANDINI BARBARA E.;BRANDES GEORGE R.;TISCHLER MICHAEL A. |
| 分类号 |
C30B29/36;C30B23/02;C30B25/02;H01L21/04;H01L21/20;H01L21/205;H01L29/04;H01L29/24;(IPC1-7):C30B25/00;B32B9/00;C30B1/00;C30B23/00;C30B28/12;C30B28/14 |
主分类号 |
C30B29/36 |
| 代理机构 |
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