| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to omit an annealing process for activating a source/drain junction, by forming the source/drain junction before a lightly-doped-drain(LDD) region is formed and by activating ions implanted into the junction layer in forming a subsequent thermal oxide layer. CONSTITUTION: A gate pattern(37) is formed on a semiconductor substrate(31). A dummy spacer is formed on the sidewall of the gate pattern. The first impurity ions are implanted to reduce subsequent contact resistance by using the gate pattern and the dummy spacer as a mask. The second impurity ions for the source/drain junction(40) are implanted into the semiconductor substrate having the first impurity ions. After the dummy spacer is removed, the third impurity ions for an LDD junction(41) are implanted by using the gate pattern as a mask. The semiconductor substrate is selectively oxidized to activate the first, second and third impurity ions. A nitride layer spacer(43) is formed on the sidewall of the gate pattern.
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