| 摘要 |
A memory-cell array and peripheral circuit elements are formed together on a semiconductor substrate. A first interlayer insulating film is formed, covering the memory-cell array region and peripheral circuit region of the substrate. A first layer of wires is formed on the first interlayer insulating film. A second interlayer insulating film is formed on the first interlayer insulating film, covering the wires of the first layer. A second layer of wires is formed on the second interlayer insulating film. A third interlayer insulating film is formed on the second interlayer insulating film, covering the wires of the second layer. The third interlayer insulating film is processed to have a flat upper surface. A third layer of wires is formed on only that part of the third interlayer insulating film, which lies above the peripheral circuit region. Thereafter, a passivation film is deposited on the third interlayer insulating film. That part of the passivation film, which lies above the memory cell region, has a flat body.
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